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ZXMP2120FF
Electrical characteristics (at T amb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Max.
Unit Conditions
Static
Drain-source breakdown
V (BR)DSS
-200
V
I D = 1mA, V GS =0V
voltage
Zero gate voltage drain current I DSS
-10
-100
A
A
V DS = -200V, V GS =0V
V DS = -160V, V GS =0V, T=125C (?)
Gate-body leakage
I GSS
20
nA
V GS =±20V, V DS =0V
Gate-source threshold voltage
Static drain-source on-state
V GS(th)
R DS(on)
-1.5
-3.5
28
V
I D = 250 A, V DS =V GS
V GS = -10V, I D = -150mA
resistance (*)
On-state drain current (*)
I D(on)
-300
mA
V DS = -25V, V GS =-10V
Forward transconductance (*) (?) g fs
50
mS
V DS = -25V, I D = -150mA
Dynamic (?)
Input capacitance
Output capacitance
Reverse transfer capacitance
C iss
C oss
C rss
100
25
7
pF
pF
pF
V DS = -25V, V GS =0V
f=1MHz
Switching (?) (?)
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
t d(on)
t r
t d(off)
t f
7
15
12
15
ns
ns
ns
ns
V DD = -25V, V GS = -10V
I D = -150mA
R SOURCE ≈ 50
NOTES:
(*) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
(?) Switching characteristics are independent of operating junction temperature.
(?) For design aid only, not subject to production testing.
Issue 1 - January 2007
? Zetex Semiconductors plc 2007
4
www.zetex.com
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